8205A . dual n-channel mosfet datasheet 2012-2-27 page 1 of 6 general description the 8205Ais a dual n-channel m os field effect transistor which uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation wi th low gate voltages. this device is suitable for use as a load switch . features l v ds =20 v l i d =6a l low on-state resistance fast swi tching r ds(on) = 4 5 m?? (typ.) (v gs = 4.5v, i d = 2.0a) r ds(on) = 48 m?? (typ.)(v gs = 3.85v, i d = 2.0a) r ds(on) = 60 m?? (typ.) (v gs = 2.5v, i d = 2.0a) l lead free product is acquired l surface mount package application l battery protection l load switch l power management package marking and ordering information device marking device device package reel size tape width quantity 8205A 8250a tssop8 180mm 8mm 3000 units pin description
8205A datasheet 2012-2-27 page 2 of 6 pin num pin name pin func tion 1 d drain 2 s1 source1 3 s1 source1 4 g1 gate2 5 g2 gate2 6 s2 source2 7 s2 source2 8 d drain absolute maximum ra tings (ta = 25 ) symbol parameter value u nit v ds drain-source voltage 20 v i d drain current(continuou s)at tc=25 (note1) 6 a i dm drain current (pulsed) (note2) 24 a v gs gate-source voltage 12 v p d power dissipation (t c = 25c) (note1) 1.25 w tstg operating and storage temperature rang -55 to +150 notes a. pw<10us,d uty cycle<1%,v gs =4.5v b. mounted on c eramic substrate of 45 cm 2 x 2.2mm. caution: th ese values must not be exceeded under any conditions. remark: the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. thermal data symbol parameter max. uni t rthj-amb thermal resi stance junction- ambient 83 /w electrical characteri stics (t c = 25 ) symbol parameter test c onditions min. typ. max. unit v (br)dss drain-source breakdown vo ltage i d =250ua, v gs =0v 20 v i dss zero gate voltage dr ain current v ds =20v,v gs =0v 1 a i gss gate leakage current v gs =10v,v ds =0v 1 a v gs(th) gate threshold volta ge v ds =v gs ,i d = 250ua 0.5 1.15 v v gs =4.5v,i d =2a 45 50 m v gs =3.85v,i d =2a 48 52 m r ds(on) drain to source on-state resistance v gs =2.5v,i d =2a 60 70 m c iss input capacitance 37 0 pf c oss output capacitance 8 9 pf c rss reverse transfer capac itance v ds =15v,v gs =0v,f=1mhz 9.7 pf t d(on) turn-on delay time 200 ns t r rise time v dd =10v,i d =3a, v gs =4.5v,r g =4.7 (note2,3) 236 ns
8205A datasheet 2012-2-27 page 3 of 6 t d(off) turn-off delay time 36 ns t f fall time 165 ns q g total gate c harge 7.5 nc q gs gate to source charge 2.5 nc q gd gate to drain charge v dd =16v,v gs =4.5v, i d =6a (note2,3) 1.3 nc v sd (*) body diode forward voltage i f =6a,v gs =0v 0.7 4 1.2 v t rr reverse recov ery time v dd =10v,i f =6a,di/dt=100a/u s (note2) 80 ns notes: 1. surface mounted on fr4 board, t 10sec 2. pulse test : pulse width 300s, duty cycle 2% 3. essentially independent of operating temperature (*)pulsed: pulse duration typical char acteristics (25 unless note d) figure 1 out put characteristics figure 2 transfer characteristics 0 2 4 6 8 10 0 2 4 6 8 10 v ds (v) i d (a) v gs =4.5v 1.0v 1.5v 2.0v 2.5v 0 2 4 6 8 10 0 0.9 1.8 2.7 3 .6 4.5 v gs (v) i d (a) v ds =10v figure 3 thr eshold voltage vs. figure 4 bvdss vs.temperature temperature 0.4 0.6 0.8 1.0 1.2 1. 4 -75 -25 25 75 125 175 t j ( ) vth v ds =v gs i d =250ua 0.8 0.9 1.0 1.1 1.2 1. 3 -75 -25 25 75 125 175 t j ( ) bv dss v gs =0v i d =250ua
8205A datasheet 2012-2-27 page 4 of 6 figure 5 rd son vs. temperature figure 6 source-drain diode forward characteristics 0.6 0.8 1.0 1.2 1.4 1. 6 -75 -25 25 75 125 175 t j ( ) r ds(on) v gs =4.5v i d =3a 0.69 0.70 0.71 0.72 0.73 0.74 0 2 4 6 8 10 i sd (a) v sd (v) figure 7 cap acitance figure 8 gate charge 0 150 300 450 600 750 0 3 6 9 12 15 v ds (v) c (pf) f=1mhz v gs =0v c iss c rss c oss 0 1 2 3 4 5 0 2 4 6 8 10 q g (nc) v gs (v) v ds =16v i d =6a figure 9 safe operating area figure 10 maximum drain current vs case temperature 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds (v) i d (a) 100ms notes: 1. t c = 25 2. tj = 150 3. single pulse 10ms dc operation in this areais limited by r ds (on) 1ms 1s 0 1.2 2.4 3.6 4.8 6 25 50 75 100 125 150 t c ( ) i d (a)
8205A datasheet 2012-2-27 page 5 of 6 figure 11 ma ximum transient thermal impedance 0.001 0.01 0.1 1 0.0 001 0.001 0.01 0.1 1 10 100 t1, square w ave pulse duration [sec] normalized t hermal response z jc (t) notes: 1. duty factor d = t1 / t2 2. peak tj = pdm x zthjc + tc single pulse ( thermal response) 0.02 0.05 0.10 0.20 d=0.50 0.01 package dra wing
8205A datasheet 2012-2-27 page 6 of 6 dimensions unit mm dim a a(1) a(2) b c d e e1 e g l l1 a r s min. 1.05 0.0 5 0.99 0.19 2.9 6.2 4.3 0.45 0.9 0 0.09 0.2 nom. 1.1 0.1 1.02 0.25 0.127 3 6.4 4.4 0.6 1 4 mm max. 1.2 0. 15 1.05 0.3 3.2 6.6 4.5 0.65 bsc 0.254 gage plane 0.75 1.1 8 restrictions on product use n the informatio n contained herein is subject to change without notice. n rzc microelectronics co., ltd. exerts the greatest possible effort to ensure high quality and reliability. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing rzc products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. in developing your designs, please ensure that rzc products are used within specified operating ranges as set forth in the most recent rzc products specifications. n the rzc products listed in this document are intended for usage in general electronics applications (personal equipment, office equipment, domestic appliances, etc.). these rzc products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (unintended usage). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of rzc products listed in this document shall be made at the customers own risk. n rzc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design.
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